| 高端MOS管栅极驱动技术研究 |
| |
| 引用本文： | 余海生,徐婉静. 高端MOS管栅极驱动技术研究[J]. 微电子学, 2016, 46(3): 393-397 |
| |
| 作者姓名： | 余海生 徐婉静 |
| |
| 作者单位： | 中国电子科技集团公司 第二十四研究所, 重庆 400060,中国电子科技集团公司 第二十四研究所, 重庆 400060 |
| |
| 摘 要： | 高端MOS管驱动电路在高压输入大功率电源中被广泛应用。分析了高端MOS管的驱动原理,对影响高端MOS管驱动的各种因素进行了探讨,提出了适合高端MOS管驱动的基本方法。较全面地评估了传统的变压器驱动电路和自举驱动电路对高端MOS管驱动的影响,继而提出了适合高端MOS管驱动的线路结构,并采用该方案设计了一个实验电路。仿真和实验电路测试结果表明,设计电路满足要求。
|
| 关 键 词： | 高端MOS管 变压器驱动 自举驱动 |
Research of a High Side MOSFET Gate Driver Circuit |
| |
| YU Haisheng and XU Wanjing. Research of a High Side MOSFET Gate Driver Circuit[J]. Microelectronics, 2016, 46(3): 393-397 |
| |
| Authors: | YU Haisheng and XU Wanjing |
| |
| Affiliation: | Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp., Chongqing 400060, P. R. China and Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp., Chongqing 400060, P. R. China |
| |
| Abstract: | The high side MOSFET gate driver circuits have been used widely in the applications of high voltage input high power conversion. The principle of the gate driver circuit was analyzed. Various factors influencing the performances of the high side MOSFET gate driver circuit were taken into account. A primary method suitable for the high side MOSFET gate driver circuit was introduced. Based on the method, a more comprehensive study was made to estimate the effects of gate drive circuits in conventional transformer gate drive technique and bootstrap gate drive technique. And a new circuit architecture was proposed for the high side MOSFET gate driver. Finally a demo board was designed by the proposed scheme. Both simulated and tested results showed that the circuit had met the design specifications. |
| |
| Keywords: | High side MOSFET Transformer gate drive technique Bootstrap gate drive technique |
|
| 点击此处可从《微电子学》浏览原始摘要信息 |
|
点击此处可从《微电子学》下载免费的PDF全文 |
|
