| 氧化物半导瓷中晶界势垒的起源 |
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| 引用本文： | 吕文中,周东祥,龚树萍.氧化物半导瓷中晶界势垒的起源[J].华中科技大学学报(自然科学版),1994(3). |
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| 作者姓名： | 吕文中 周东祥 龚树萍 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 摘 要： | 提出了一个关于氧化物半导瓷晶界势垒起源的新观点，认为晶界势垒起源于烧结过程中外界氧在晶界中的扩散，与材料的结构、化学缺陷、掺杂、外界气氛、烧结工艺、组成状态等有密切关系，并用此理论解释了许多实验现象。
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| 关 键 词： | 晶界势垒 多余氧 表面受主态 化学吸附氧 |
The Origing of the Crain Boundary Barrier in Oxide Semiconductor Ceramics |
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| Lu WenzhongDept.of Solid-State Electronics,H. U. S.T.,Wuhan ,China., Zhou Dongxiang, Gong Shuping.The Origing of the Crain Boundary Barrier in Oxide Semiconductor Ceramics[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1994(3). |
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| Authors: | Lu WenzhongDeptof Solid-State Electronics H U ST Wuhan China Zhou Dongxiang Gong Shuping |
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| Affiliation: | Lu WenzhongDept.of Solid-State Electronics,H. U. S.T.,Wuhan 430074,China., Zhou Dongxiang, Gong Shuping |
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| Abstract: | A new interpretation for the origin the grain boundary barrier is oxide semiconductorceramics is proposed,It is suggested by the authors that the barrier originates from the dif-fusion of excess oxygen in grain boundaries during sintering. This theory has been used toexplain some phenomena observed during the experiments. |
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| Keywords: | grain boundary barrier excess oxygen surface acceptor state chemisorbed oxygen |
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