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A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam |
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| Authors: | L Hrubčín Yu B Gurov B Zaťko O M Ivanov S V Mitrofanov S V Rozov V G Sandukovsky V A Semin V A Skuratov |
| Affiliation: | 1.Joint Institute for Nuclear Research,Dubna,Russia;2.Institute of Electrical Engineering, Slovak Academy of Sciences,Bratislava,Slovakia;3.National Research Nuclear University, Moscow Engineering Physics Institute,Moscow,Russia |
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| 本文献已被 SpringerLink 等数据库收录！ | |
