| Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon |
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| 引用本文： | LIU Caichi HAO Qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong Qigang Zhou WANG Jing XIAO Qinghua. Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon[J]. 稀有金属(英文版), 2006, 25(4): 389-392. DOI: 10.1016/S1001-0521(06)60073-9 |
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| 作者姓名： | LIU Caichi HAO Qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong Qigang Zhou WANG Jing XIAO Qinghua |
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| 作者单位： | [1]Institute of Information Functional Materials, Hebei University of Technology, Tianjin 300130, China [2]General Re, search Institute of Non-ferrous Metals, Beijing 100088, China |
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| 基金项目： | 国家自然科学基金;天津市自然科学基金;河北省自然科学基金 |
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| 摘 要： | The morphology and microstructure of flow pattern defects （FPDs） in lightly boron-doped Czochralski-grown silicon （Cz-Si） crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.
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| 关 键 词： | 流型缺陷 生长缺陷 原子力显微镜方法 Czochralski-生长硅 硅晶体 |
| 收稿时间： | 2005-09-12 |
Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon |
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| LIU Caichi,HAO Qiuyan,ZHANG Jianfeng,TENG Xiaoyun,Sun Shilong,Qigang Zhou,WANG Jing,XIAO Qinghua. Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon[J]. Rare Metals, 2006, 25(4): 389-392. DOI: 10.1016/S1001-0521(06)60073-9 |
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| Authors: | LIU Caichi HAO Qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong Qigang Zhou WANG Jing XIAO Qinghua |
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| Affiliation: | 1. Univ. Grenoble Alpes, CEA-LETI, Minatec, 17 rue des Martyrs, 38000, Grenoble, France;2. Univ. Grenoble Alpes, CEA-INAC, 17 rue des Martyrs, 38000, Grenoble, France |
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| Abstract: | The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing. |
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| Keywords: | flow pattern defects grown-in defects atomic force microscopy Czochralski-grown silicon |
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