0.1 μm Schottky-collector AlAs/GaAs resonant tunneling diodes

The Schottky-collector resonant tunneling diode (RTD) is an RTD with the normal N+ collector and ohmic contact replaced by a Schottky contact, thereby eliminating the associated parasitic resistance. With submicron Schottky contact dimensions, the remaining components of the parasitic series resistance can be greatly reduced, resulting in an increased maximum frequency of oscillation, f_max. AlAs/GaAs Schottky-collector RTDs were fabricated using 0.1 μm T-gate technology developed for high electron mobility transistors. From their measured dc and microwave parameters, and including the effect of the quantum well lifetime, f_max=900 GHz is computed