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Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures |
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| Authors: | Lin Fang Shen Bo Lu Li-Wu Liu Xin-Yu Wei Ke Xu Fu-Jun Wang Yan Ma Nan and Huang Jun |
| Affiliation: | State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China%};State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China%};State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China%};Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China%};State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China%};State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China%};Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Abstract: | By using temperature-dependent Hall, variable-frequency capacitance—voltage and cathodoluminescence (CL) measurements, the identification of inductively coupled plasma (ICP)-induced defect states around the AlxGa1 - xN/GaN heterointerface and their elimination by subsequent annealing in AlxGa1 - xN/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75 × 1012 cm - 2·eV - 1. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N2 ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related. |
| Keywords: | inductively coupled plasma subsequent annealing defect state |
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