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Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition |
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| Authors: | Yan Jun-Feng Wang Tao Wang Jing-Wei Zhang Zhi-Yong and Zhao Wu |
| Affiliation: | School of Information Science and Technology, Northwest University, Xi'an 710069, China; School of Information Science and Technology, Northwest University, Xi'an 710069, China;Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068, China; Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068, China |
| Abstract: | Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAsSb on (100) GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52×1016cm-3. |
| Keywords: | metalorganic chemical vapour deposition (MOCVD) antimonides semiconducting indium compounds |
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