A 0.1-μm delta-doped MOSFET fabricated with post-low-energyimplanting selective epitaxy |
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Authors: | Noda K Tatsumi T Uchida T Nakajima K Miyamoto H Chenming Hu |
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Affiliation: | Memory Device Dev. Lab., NEC Corp., Kanagawa; |
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Abstract: | A simple fabrication technology for delta-doped MOSFETs, named post-low-energy implanting selective epitaxy (PLISE) is presented. The PLISE technology needs no additional photo-lithography mask, deposition step or etching step even for CMOS devices. The only additional step is growing undoped epitaxial channel layers by UHV-CVD after the channel implantation. With this technology, delta-doped NMOSFETs with 0.1-μm gate length were successfully fabricated. By optimizing the epi-layer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-μm gate length. Moreover, the junction capacitance at zero bias is reduced by 50% |
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