| AlGaN/PZT探测器的研制及其性能 |
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| 引用本文： | 张燕,孙璟兰,王妮丽,韩莉,刘向阳,李向阳,孟祥建. AlGaN/PZT探测器的研制及其性能[J]. 半导体学报, 2010, 31(12): 124015-3 |
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| 作者姓名： | 张燕 孙璟兰 王妮丽 韩莉 刘向阳 李向阳 孟祥建 |
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| 基金项目： | 国家自然科学基金60807037 |
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| 摘 要： | 本文报道了一种新型紫外红外应用的探测器的设计、制备及其性能。探测器由蓝宝石衬底上生长的p-GaN/i-GaN/n-Al0.3Ga0.7N/SiO2/LaNiO3/PZT/Pt多层结构组成。分别测量了紫外和红外的性能。紫外部分，光谱响应范围在302-363nm波段；在波长355nm，探测器零偏响应率为0.064A/W；I-V测量表明零偏暗电流为-1.57×10-12A；该探测器的探测率为1.81×1011cmHz1/2W-1。红外部分，在波长4μm处，探测器响应率为1.58×105cmHz1/2W-1。
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| 关 键 词： | AlGaN/PZT 双波段探测器 UV/IR 响应率 探测率 |
| 收稿时间： | 2010-06-07 |
| 修稿时间： | 2010-08-12 |
Fabrication and characterization of an AlGaN/PZT detector |
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| Zhang Yan,Sun Jinglan,Wang Nili,Han Li,Liu Xiangyang,Li Xiangyang and Meng Xiangjian. Fabrication and characterization of an AlGaN/PZT detector[J]. Chinese Journal of Semiconductors, 2010, 31(12): 124015-3 |
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| Authors: | Zhang Yan Sun Jinglan Wang Nili Han Li Liu Xiangyang Li Xiangyang Meng Xiangjian |
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| Affiliation: | State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | |
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| Keywords: | AlGaN/PZT dual-band detector UV/IR responsivity detectivity |
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