Nitride-based cascade near white light-emitting diodes |
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| Authors: | Chen CH Chang SJ Su YK Sheu JK Chen JF Kuo CH Lin YC |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan; |
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| Abstract: | An InGaN-GaN blue light-emitting diode (LED) structure and an InGaN-GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near white LED. In order to avoid thyristor effect, we choose a large 2.1×2.1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near white light emission with Commission International de l'Eclairage color coordinates x=0.2 and y=0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a cascade near white LED were 4.2 mW, 81 l m/W, and 9000 K, respectively |
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