| 应变Si电子电导有效质量模型 |
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| 引用本文： | 赵丽霞,张鹤鸣,胡辉勇,戴显英,宣荣喜.应变Si电子电导有效质量模型[J].物理学报,2010,59(9):6545-6548. |
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| 作者姓名： | 赵丽霞 张鹤鸣 胡辉勇 戴显英 宣荣喜 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071 |
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| 基金项目： | 国家部委项目(Nos. 51308040203, 9140A08060407DZ0103, 6139801)资助的课题. |
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| 摘 要： | 采用K·P微扰法建立了应变Si导带能谷由纵、横向有效质量表征的E-k关系,并在此基础上,研究分析了(001),(101),(111)晶面应变Si电子的电导有效质量与应力、能谷分裂能及晶向的关系.结果表明,弛豫Si1-xGex材料(001)面生长的应变Si沿100],010]晶向的电子电导有效质量和弛豫Si1-xGex材料(101)面生长的应变Si
关键词：
应变Si
K·P法
电导有效质量
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| 关 键 词： | 应变Si K·P法 电导有效质量 |
| 收稿时间： | 8/7/2009 12:00:00 AM |
| 修稿时间： | 1/7/2010 12:00:00 AM |
Model of electronical conductivity effective mass of strained Si |
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| Zhao Li-Xia,Zhang He-Ming,Hu Hui-Yong,Dai Xian-Ying,Xuan Rong-Xi.Model of electronical conductivity effective mass of strained Si[J].Acta Physica Sinica,2010,59(9):6545-6548. |
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| Authors: | Zhao Li-Xia Zhang He-Ming Hu Hui-Yong Dai Xian-Ying Xuan Rong-Xi |
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| Affiliation: | Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | Strained Si CMOS technology is one of the most advanced technologies in present day microelectronics. Electronical conductivity effective mass of strained Si is a key parameter to study electron mobility enhancement. Using K ·P method with the help of perturbation theory, dispersion relation near conduction band valley was determined, including the longitudinal and transverse masses. And then, electronical conductivity effective masses of strained Si on (001),(101) and (111) planes were obtained with respect to stress, splitting energy and directions. It was found that both the 100]and 010]directional electronical conductivity effective masses of strained Si/(001)Si1-xGex and the 010]directional one of strained Si/(101)Si1-xGex decrease with increasing Ge fraction or stress, and both values tend to be constant. The results provide valuable reference to the conduction channel design related to stress and orientation in the strained Si nMOS devices. |
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| Keywords: | strained Si K ·P method conductivity effective mass |
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