Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness |
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| Authors: | RJ Kashtiban M Missous |
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| Affiliation: | a Nanostructured Materials Research Group, School of Materials, The University of Manchester, P.O. Box 88, Manchester M1 7HS, UK
b Microelectronics and Nanostructures Group, School of Electrical and Electronic Engineering, The University of Manchester, P.O. Box 88, Manchester M60 1QD, UK |
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| Abstract: | Two kinds of superlattices (i) with and (ii) without growth interrupt (GI) after deposition of 1.77 monolayers (ML) of InAs on GaAs (0 0 1) were grown by solid-source molecular beam epitaxy (MBE) and assessed by transmission electron microscopy (TEM) techniques, double crystal X-ray diffraction (DCXRD) and photoluminescence (PL) measurements in order to gain an understanding of the structural and compositional properties. In case (i) formation of coherent dislocation free self-organized quantum dots (SOQDs) with 2.8-3.2 nm height and 13-16 nm lateral size was observed, whereas in case (ii) no quantum dots had formed. In order to better understand the implication of growth interruption for the formation mechanism, highly localised assessment of the composition of the QD was carried out via atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS). |
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| Keywords: | Molecular beam epitaxy InAs quantum dots EELS HAADF |
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