The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100) |
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Authors: | Hakkarainen T V Polojärvi V Schramm A Tommila J Guina M |
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Affiliation: | Optoelectronics Research Centre, Tampere University of Technology, PO Box 692, FIN-33101 Tampere, Finland. teemu.hakkarainen@tut.fi |
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Abstract: | We report on the effect of post-growth thermal annealing of [011]- ,[011(-)]-, and [010]-oriented quantum dot chains grown by molecular beam epitaxy on GaAs(100) substrates patterned by UV-nanoimprint lithography. We show that the quantum dot chains experience a blueshift of the photoluminescence energy, spectral narrowing, and a reduction of the intersubband energy separation during annealing. The photoluminescence blueshift is more rapid for the quantum dot chains than for self-assembled quantum dots that were used as a reference. Furthermore, we studied polarization resolved photoluminescence and observed that annealing reduces the intrinsic optical anisotropy of the quantum dot chains and the self-assembled quantum dots. |
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