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| PMOS管的低剂量率辐射损伤增强效应 | |
| 引用本文： | 张华林,陆妩,任迪远,唐贵平.PMOS管的低剂量率辐射损伤增强效应[J].固体电子学研究与进展,2009,29(2). |
| 作者姓名： | 张华林 陆妩 任迪远 唐贵平 |
| 作者单位： | 1. 长沙理工大学,长沙,410076;中南大学,长沙,410075 2. 中国科学院新疆理化技术所,乌鲁木齐,830011 3. 长沙理工大学,长沙,410076 |
| 基金项目： | 湖南省教育厅青年项目，湖南省教育厅一般项目 |
| 摘 要： | 研究了国产非加固PMOS管在不同剂量率条件下的电离辐照效应及较高剂量率辐照后的退火效应。研究表明,用较高剂量率辐照加退火不能达到其低剂量率辐照导致的阈电压漂移。因此PMOS管的电离辐照效应并非时间相关效应,而是低剂量率辐射损伤增强效应。 |
| 关 键 词： | 电离辐照 阈电压漂移 低剂量率 剂量率效应 |
PMOSFET's Enhanced Low Dose Rate Irradiation Damage |
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| ZHANG Hualin,LU Wu,REN Diyuan,TANG Guiping.PMOSFET's Enhanced Low Dose Rate Irradiation Damage[J].Research & Progress of Solid State Electronics,2009,29(2). | |
| Authors: | ZHANG Hualin LU Wu REN Diyuan TANG Guiping |
| Affiliation: | 1 Changsha University of Science and Technology;Changsha;410076;CHN;2 Central South University;410075;CHN;3 Xinjiang Institute of Physics and Chemistry;the Chinese Academy of Sciences;Urumqi;830011;CHN |
| Abstract: | The ionizing irradiation response of unhardened PMOSFET which is manufactured in China at different dose-rates,and the annealing effect at higher dose-rates have been investigated.The results have shown that the threshold voltage shift following the higher dose-rates irradiation plus anneal can't match that obtained at the lower dose-rate for PMOS,so the ionizing radiation response of PMOS isn't time dependent effect,but enhanced low dose rate irradiation damage. |
| Keywords: | ionizing irradiation threshold voltage shift low dose-rate dose-rate effect |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |
