|
|||||
|
|
Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures |
|
| Authors: | DZ-Y Ting X Cartoixà TC McGill DL Smith JN Schulman |
| Affiliation: | (1) Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA;(2) Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA;(3) Los Alamos National Laboratory, Los Alamos, NM 87545, USA;(4) HRL Laboratories, LLC, Malibu, CA 90265, USA |
| Abstract: | The Rashba effect resonant tunneling diode is a candidate for achieving spin polarizing under zero magnetic field using only conventional non-magnetic III–V semiconductor heterostructures. We point out the challenges involved based on simple arguments, and offer strategies for overcoming these difficulties. We present modeling results that demonstrate the benefits of the InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) for spin filtering applications. |
| Keywords: | resonant tunneling interband tunneling Rashba effect spin filter |
| 本文献已被 SpringerLink 等数据库收录！ | |
