Electronic transport for pristine and doped crossed graphene nanoribbon junctions with zigzag interfaces |
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Authors: | Benhu Zhou Benliang Zhou Aihua Zeng Guanghui Zhou |
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Affiliation: | 1. Department of Physics, Shaoyang University, Shaoyang 422000, China;2. Department of Physics and Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, China |
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Abstract: | Using the fully self-consistent non-equilibrium Green?s function (NEGF) method combined with density functional theory, we investigate numerically the electronic transport property for pristine and doped crossed graphene nanoribbon (GNR) junctions. It is demonstrated that in the case of zigzag interfaces, the I–V characteristics of the junction with or without doping always show semiconducting behavior, which is different from that in the case of armchair interfaces Zhou, Liao, Zhou, Chen, Zhou, Eur. Phys. J. B 76 (2010) 421]. Interestingly, negative differential resistance (NDR) behavior can be clearly observed in a certain bias region for nitrogen-doped shoulder crossed junction. A mechanism for the NDR behavior is suggested. |
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Keywords: | Electronic transport GNRs NEGF method combined with density functional theory NDR |
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