MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology |
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Authors: | R. Gassilloud,F. Martin,M. Hopstaken,M. Cassé ,Thierry Billon |
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Affiliation: | a CEA-LETI Minatec, 17 rue des Martyrs, 38000 Grenoble, France b STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France |
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Abstract: | We report material and electrical properties of tungsten silicide metal gate deposited on 12 in. wafers by chemical vapor deposition (CVD) using a fluorine free organo-metallic (MO) precursor. We show that this MOCVD WSix thin film deposited on a high-k dielectric (HfSiO:N) shows a N+ like behavior (i.e. metal workfunction progressing toward silicon conduction band). We obtained a high-k/WSix/polysilicon “gate first” stack (i.e. high thermal budget) providing stable equivalent oxide thickness (EOT) of ∼1.2 nm, and a reduction of two decades in leakage current as compared to SiO2/polysilicon standard stack. Additionally, we obtained a metal gate with an equivalent workfunction (EWF) value of ∼4.4 eV which matches with the +0.2 eV above Si midgap criterion for NMOS in ultra-thin body devices. |
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Keywords: | Tungsten silicide Organo-metallic chemical vapor deposition MOCVD High-k NMOS transistors |
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