Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet |
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Authors: | M. Feng V. K. Eu T. Zielinski J. M. Whelan |
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Affiliation: | (1) Torrance Research Center, Hughes Aircraft Company, 3100 West Lomita Boulevard, 90509 Torrance, CA;(2) Material Science Department, University of Southern California, 90009 Los Angeles, CA |
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Abstract: | This paper describes the Si-doping of GaAs that was grown using the AsCl3:H2:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl3:SiCl4 liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O16 to 2×1019 cm?3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl3:SiCl4 doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n+ structures with order of magnitude changes occurring within 500 Å. For the 1×1016 to 8×l018 cm?3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz. |
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Keywords: | Si Doped GaAs by SiCl4 + ASCl3 Liquid Solutions |
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