| POLYMER DIODES MADE OF ION IMPLANTED POLYACETYLENE FILMS |
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| 引用本文： | 盛康龙,鲍锦荣,荣廷文,林森浩,王玟珉,万洪和,邹志宜,朱新芳. POLYMER DIODES MADE OF ION IMPLANTED POLYACETYLENE FILMS[J]. 核技术(英文版), 1990, 0(4) |
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| 作者姓名： | 盛康龙 鲍锦荣 荣廷文 林森浩 王玟珉 万洪和 邹志宜 朱新芳 |
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| 作者单位： | Shanghai Institute of Nuclear Research. Academia Sinica Shanghai 201800 China，Shanghai Institute of Nuclear Research. Academia Sinica Shanghai 201800 China，Shanghai Institute of Nuclear Research. Academia Sinica Shanghai 201800 China，Shanghai Institute of Nuclear Research. Academia Sinica Shanghai 201800 China，Shanghai Institute of Nuclear Research. Academia Sinica Shanghai 201800 China，Shanghai Institute of Nuclear Research. Academia Sinica Shanghai 201800 China，Shanghai Institute of Nuclear Research. Academia Sinica Shanghai 201800 China，Shanghai Institute of Nuclear Research. Academia Sinica Shanghai 201800 China |
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| 基金项目： | The Project Supported by National Natural Science Foundation of China, Contract No.1860193 |
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| 摘 要： | Polyacetylene films were doped with FeCl3 and implanted with 30 k'eV K+ ions. Physical changes to the films were examined by a series of measurements, which include the four-probe test, infrared ray absorption and 2 MeV He+ particle elastic recoil dettection and Rutherford backscattering. The chemical dopants (Fe+++ and Cl-) were redistributed after the implantation and the different species (K+. Fe+++ and Cl-ions) formed p - n junctions at the implantation depths. The implanted films exhibited desirable Ⅰ-Ⅴ characteristics, with current densities as high as 600 mA/cm- at 3V and back - to - forward ratio of current over 300. The polymer diodes kept their behavior for over 60 days. Discussions on the results were given in detail.
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POLYMER DIODES MADE OF ION IMPLANTED POLYACETYLENE FILMS |
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| Sheng Kanglong Bao Jinrong,Rong TingwenLin Senhao Wang Wenmin Wan HongheZou Zhiyi and Zhu Xinfang. POLYMER DIODES MADE OF ION IMPLANTED POLYACETYLENE FILMS[J]. , 1990, 0(4) |
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| Authors: | Sheng Kanglong Bao Jinrong Rong TingwenLin Senhao Wang Wenmin Wan HongheZou Zhiyi Zhu Xinfang |
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| Abstract: | |
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| Keywords: | Ion implantation Dopant depth profiling Polyacetylene diodes |
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