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膜厚对Zr,Al共掺杂ZnO透明导电薄膜结构和光电性能的影响
引用本文:袁玉珍,王辉,张化福,刘汉法,刘云燕.膜厚对Zr,Al共掺杂ZnO透明导电薄膜结构和光电性能的影响[J].人工晶体学报,2010,39(1):169-173.
作者姓名:袁玉珍  王辉  张化福  刘汉法  刘云燕
作者单位:山东理工大学理学院,淄博,255049;山东理工大学理学院,淄博,255049;山东理工大学材料科学与工程学院,淄博,255049
基金项目:山东理工大学“功能材料”研究创新项目(CX0602)
摘    要:采用直流磁控溅射法在玻璃衬底上制备出Zr,Al共掺杂ZnO(AZZO)透明导电薄膜.用XRD和SEM分析和观察了薄膜样品的组织结构和表面形貌.研究表明:制备的AZZO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向.另外还研究了薄膜的结构、光学和电学性质随薄膜厚度的变化关系.当薄膜厚度为843 nm时,电阻率具有最小值1.18×10~(-3) Ω·cm,在可见光区(500~800 nm)平均透过率超过93;.

关 键 词:磁控溅射  Zr  Al共掺杂ZnO  膜厚  透明导电薄膜  

Effect of Film Thickness on Structure and Optoelectrical Properties of Zr, Al Co-doped ZnO Transparent Conducting Thin Films
YUAN Yu-zhen,WANG Hui,ZHANG Hua-fu,LIU Han-fa,LIU Yun-yan.Effect of Film Thickness on Structure and Optoelectrical Properties of Zr, Al Co-doped ZnO Transparent Conducting Thin Films[J].Journal of Synthetic Crystals,2010,39(1):169-173.
Authors:YUAN Yu-zhen  WANG Hui    ZHANG Hua-fu  LIU Han-fa  LIU Yun-yan
Affiliation:1.School of Science;Shandong University of Technology;Zibo 255049;China;2.School of Materials Science and Engineering;China
Abstract:Al,Zr co-doped ZnO transparent conducting thin films were successfully prepared on glass substrates by DC magnetron sputtering at room temperature.Structure and surface morphology of Al,Zr co-doped ZnO thin films were investigated by XRD and SEM,respectively.The experimental results showed that all the films are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis.The structural and photoelectrical properties of the films were studied for different thickness in detail.The ...
Keywords:magnetron sputtering  Zr  Al co-doped ZnO  film thickness  transparent conducting films  
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