| W阻挡层对Al/TiSi_2/Si接触系统热稳定性的影响 |
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| 引用本文： | 周凤蛟 周南生. W阻挡层对Al/TiSi_2/Si接触系统热稳定性的影响[J]. 固体电子学研究与进展, 1992, 12(2): 136-140 |
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| 作者姓名： | 周凤蛟 周南生 |
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| 作者单位： | 西安电子科技大学 710071(周凤蛟，周南生)，西安电子科技大学 710071(严北平) |
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| 摘 要： | 用X射线衍射及I—V测量技术研究了W在Al/TiSi_2/Si接触系统中的作用,并与不加W阻挡层的情况作了比较。热稳定性的研究表明:在高达100℃退火时,W阻挡层能够阻止Al与TiSi_2的完全反应。对Al/W/TiSi_2/Si接触二极管的I—V测试表明,在480℃以内退火,势垒高度变化不大。当退火温度达500℃时,Si通过TiSi_2层扩散至W阻挡层而使之失效.
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| 关 键 词： | 阻挡层 硅化物 肖特基势垒 热稳定性 退火 |
The Effect of Tungsten Barrier Layer on Thermal Stability of Ai/TiSi_2/Si System |
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| Zhou Fengjiao. Zhou Nansheng.Yan Beiping. The Effect of Tungsten Barrier Layer on Thermal Stability of Ai/TiSi_2/Si System[J]. Research & Progress of Solid State Electronics, 1992, 12(2): 136-140 |
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| Authors: | Zhou Fengjiao. Zhou Nansheng.Yan Beiping |
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| Abstract: | We have studied the effect of tungsten on Al/TiSi2/Si system using X-ray diffraction together with current-voltage measurement and then compared this system with an Al/TiSi2/Si system without tungsten layer. The results exhibit that tungsten barrier layer can retard the complete in-tertnetallic action betweenAl and TiSi2 below 700. The current -voltage measurement indicates that the variation of barrier height is very small below 480, but when the annealing temperature increases to 500 , silicon can diffuse acroes the TiSi2 into tungsten barrier layer to make its barrier effect failure. |
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| Keywords: | Barrier Layer Silicide Schottky Barrier Thermostability Annealing |
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