Infrared reflectance spectra and morphologic features of the surface of epitaxial AlxGa1−x As/GaAs(100) heterostructures with the ordered AlGaAs2 phase |
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| Authors: | É. P. Domashevskaya P. V. Seredin A. N. Lukin L. A. Bityutskaya M. V. Grechkina I. N. Arsent’ev D. A. Vinokurov I. S. Tarasov |
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| Affiliation: | (1) Voronezh State University, Voronezh, 394006, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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| Abstract: | The infrared reflectance spectra associated with lattice vibrations in the epitaxial AlxGa1?x As/GaAs(100) heterostructures with different Al content in the cation sublattice are studied. The structures are grown by metal-organic chemical vapor deposition. In the spectrum of the structure with x ≈ 0.50, the vibration modes corresponding to the superstructurally ordered AlGaAs2 phase are detected. The atomic force microscopy of the surface of the sample with x ≈ 0.50 reveals areas of ordered nano-scaled profile, with a period of ～ 115 nm. The ordered domains involve the AlGaAs2 structured phase. |
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