哑铃形碳化硅晶须生长的机理

研究了仿生哑铃形碳化硅晶须的生长机理，发现组成仿生晶须的念珠状小球与直杆状碳化硅晶须的生成过程是相对独立的，而且念珠状小球在直杆状晶须上的生长位置是一定的，首先，直杆状碳化硅晶须在反应空间中生成，然后由Si,SiO,SiO2等组成的非晶态物质的直杆状晶须上的缺陷位置沉积长大，形成包裹在晶须上的念珠涉球，念珠状小球不仅可以在制备碳化硅晶须的过程中生成，而且能够在已有的碳化硅和钛酸钾等晶须上生成。

GROWTH MECHANISM OF DUMBBELL-SHAPED BIOMIMETIC SiC WHISKERS

The growth mechanism of dumbbell-shaped SiC whiskers was proposed according to the results of direct and indirect experiments. The direct experiment was designed to change the reaction time from 10 mm to 4 h, and in the indirect experiments the commercial SiC and K2O6TiO2 whiskers were used to investigate whether beads grow on their surface or not. It was found that the growths of the SiC whiskers and beads composing the biomimetic SiC whiskers were independent. First the whiskers grew up in the furnace, then the amorphous materials composed of Si, SiO and SiO2 began to deposit on the stacking faults of the grown whiskers and formed beads encircled the whiskers. Moreover, the beads also can be formed on the commercial SiC and K2O.6TiO2 whiskers.