| 异质结光电晶体管增益特性分析 |
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| 引用本文： | 殷景志 石家纬. 异质结光电晶体管增益特性分析[J]. 半导体光电, 1995, 16(2): 157-162 |
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| 作者姓名： | 殷景志 石家纬 |
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| 作者单位： | 吉林工业大学，吉林大学 |
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| 摘 要： | 从理论上分析了用宽带隙材料作发射区的ｎ－ｐ－ｎ光电晶体管可提高其发射区注入效率，就ｎ－ｐ－ｎ光电三极管的增益特性进行了研究，给出了光增益与电增益的关系。
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| 关 键 词： | 光电晶体管 异质结 增益特性 |
Analysis on gain characteristics of heterojunction phototransistors |
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| YIN Jingzhi,WANG Zhijie. Analysis on gain characteristics of heterojunction phototransistors[J]. Semiconductor Optoelectronics, 1995, 16(2): 157-162 |
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| Authors: | YIN Jingzhi WANG Zhijie |
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| Abstract: | To improve injection efficiency of an emitting region,the n-p-n phototransistor using the wide bandgap materials as an emitting region is analysed theoretically.The gain characteristics of the n-p-n phototransistor is studied.The relation between optical and electronic gains is given. |
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| Keywords: | Phototransistors Heterojunction Gain Characteristics |
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