Effects of NH4F on the deposition rate and buffering capability of electroless Ni-P plating solution |
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Authors: | H.G. Ying T.Y. Ma J.M. Wu L.Q. Yu |
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Affiliation: | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China |
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Abstract: | The deposition rate and buffering capability of alkaline electroless Ni-P plating solution containing ammonium fluoride (NH4F) have been investigated. When the NH4F concentration is below 10 g L− 1, the deposition rate is improved with the addition of NH4F, reaching the maximum value at 2 g L− 1. The buffering capability of solutions is found to be improved with increasing NH4F concentration. Due to the improvement of buffering capability, refined and compact Ni-P coatings with homogeneous elemental distribution of P have been achieved. Therefore, both the corrosion resistance and microhardness of Ni-P coatings are significantly improved. The mechanism of NH4F improving the deposition rate and the buffering capability is discussed. |
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Keywords: | Ammonium fluoride Electroless Ni-P plating Buffering capability |
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