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Effects of NH4F on the deposition rate and buffering capability of electroless Ni-P plating solution
Authors:H.G. Ying  T.Y. Ma  J.M. Wu  L.Q. Yu
Affiliation:State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
Abstract:The deposition rate and buffering capability of alkaline electroless Ni-P plating solution containing ammonium fluoride (NH4F) have been investigated. When the NH4F concentration is below 10 g L− 1, the deposition rate is improved with the addition of NH4F, reaching the maximum value at 2 g L− 1. The buffering capability of solutions is found to be improved with increasing NH4F concentration. Due to the improvement of buffering capability, refined and compact Ni-P coatings with homogeneous elemental distribution of P have been achieved. Therefore, both the corrosion resistance and microhardness of Ni-P coatings are significantly improved. The mechanism of NH4F improving the deposition rate and the buffering capability is discussed.
Keywords:Ammonium fluoride   Electroless Ni-P plating   Buffering capability
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