| 线性电压扫描法测量硅的体产生寿命和表面产生速度的研究` |
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| 引用本文： | 丁扣宝,张秀淼.线性电压扫描法测量硅的体产生寿命和表面产生速度的研究`[J].浙江大学学报(理学版),1995,22(1):22-27. |
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| 作者姓名： | 丁扣宝 张秀淼 |
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| 摘 要： | 本文采用 Rab bain 的 产 生 区 宽度模 型,导 出了描述线性 电压 扫描 作用下 M O S 电容 器的电容 一 时间瞬态特性的微分方程,通过积分这一微分方程,得到 了描述线性 电压 扫描作用的M O S 电容器的 电容 一时 间瞬 态特性方 程.依据这 一方 程,提出了一 种确定体产生寿命和 表面产生速度的计算方法.
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| 关 键 词： | M O S 电容器 C一t瞬态特性 体产 生寿命 表 面产生速度 |
The Determination of the Bulk GenerationLifetime and Surface Generation Velocityin Silicon by Linear-sweep Voltage Method |
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| Ding Koubao Zhang Xiumiao.The Determination of the Bulk GenerationLifetime and Surface Generation Velocityin Silicon by Linear-sweep Voltage Method[J].Journal of Zhejiang University(Sciences Edition),1995,22(1):22-27. |
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| Authors: | Ding Koubao Zhang Xiumiao |
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| Affiliation: | Dept. of Electronic Engineering |
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| Abstract: | Using Rabbani's model for generation region width, a differential equation, which describes the capacitance-time (C-t) transient characteristics of a MOS capacitor under the linear-sweep voltage, was obtained. The theoretical C-t transient characteristics can be obtained by integrating this differential equation. On the basis of this, a method for determining both the generation lifetime and surface generation velocity was proposed. |
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| Keywords: | MOS capacitor C-t transient characteristics bulk generation lifetime surface generation velocity |
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