A low noise CMOS RF front-end for UWB 6-9 GHz applications

An integrated fully differential ultra-wideband CMOS RF front-end for 6-9 GHz is presented.A resistive feedback low noise amplifier and a gain controllable IQ merged folded quadrature mixer are integrated as the RF front-end.The ESD protected chip is fabricated in a TSMC 0.13 μm RF CMOS process and achieves a maximum voltage gain of 23-26 dB and a minimum voltage gain of 16-19 dB,an averaged total noise figure of 3.3-4.6 dB while operating in the high gain mode and an in-band IIP3 of-12.6 dBm while in the low gain mode.This RF front-end consumes 17mA from a 1.2 V supply voltage.