Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing |
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Authors: | Yuheng Zeng Jiahe ChenMiangyang Ma Weiyan WangDeren Yang |
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Affiliation: | State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People''s Republic of China |
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Abstract: | Oxygen precipitation in conventional and nitrogen co-doped heavily phosphorus (P)-doped Czochralski silicon (CZ-Si) crystal subjected to various high-temperature annealing in the range of 1000–1150 °C was comparatively investigated. It was revealed that oxygen precipitates hardly generated in conventional heavily P-doped CZ-Si; while they remarkably generated in the nitrogen co-doped one. Moreover, nitrogen doping could enhance oxygen precipitation during the prolonged annealing with a rapid thermal process (RTP) pre-treatment, but it has neglectable influence on oxygen precipitation for short-time annealing. It was believed that nitrogen co-doped heavily P-doped CZ-Si possesses nitrogen-related complexes that act as heterogeneous nuclei for super-saturated interstitial oxygen and then enhanced oxygen precipitation. Finally, it was found that nitrogen doping could hardly enhance oxygen precipitation in heavily P-doped CZ-Si at 1200 °C. |
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Keywords: | 61 72 Tt 61 72 Cc 71 55 Cn |
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