A 4H-SiCp-i-n diode fabricated by a combination of sublimation epitaxy and CVD |
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| Authors: | E. V. Bogdanova A. A. Volkova A. E. Cherenkov A. A. Lebedev R. D. Kakanakov L. P. Kolaklieva G. A. Sarov T. M. Cholakova A. V. Kirillov L. P. Romanov |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) Institute of Applied Physics, Plovdiv, 4000, Bulgaria;(3) Svetlana-Elektropribor, St. Petersburg, 194156, Russia |
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| Abstract: | The possibility of fabricating heavily doped (N a ?N d ≥ 1 × 1019 cm?3) p+-4H-SiC layers on CVD-grown lightly doped n-4H-SiC layers by sublimation epitaxy has been demonstrated. It is shown that a Au/Pd/Ti/Pd contact, which combines a low specific contact resistance (～2 × 10?5 Ω cm2) with high thermal stability (up to 700°C), is the optimal contact to p-4H-SiC. The p-n structures obtained are used to fabricate packaged diodes with a breakdown voltage of up to 1400 V. |
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