A new method for in situ measurement of parameters and degradation processes in modern nanoscale programmable devices

This paper presents a new method and results from measurement of internal parameters of programmable nanoscale circuits, namely Xilinx FPGA devices and especially Zynq SoC devices designed on 28 nm TSMC’s technology and older 45 nm Spartan 6 device as well as Xilinx Virtex product lines. The method utilizes a new undersampling approach for frequency measurement and an easy way of processing BRAM data streams. The proposed flexible circuits have been used in various measurements of timing parameters and delays in FPGAs, including measurements or detection of the aging issues. The paper presents results of measurements under various core voltage values as performed on selected Xilinx FPGA platforms, including key results about limited usability of the latest 28 nm devices under accelerated conditions and possibility of studying or mitigating aging effects in FPGAs. The paper presents rare results of experiments, real measurements and data available from current as well as previous technology nodes and it attempts to uncover new facts and areas of the latest high-end technologies, including the area of aging and degradation processes in general. The new methodology, presented approach and results can also be used in various dependable systems, including selected aerospace, medical, automotive or transportation ones. It is also directly and easily applicable to modern processor and multicore systems.