| Structure and chemical states of highly eptiaxial CeO2（001） films grown on SrTiO_3 substrate by laser molecular beam epitaxy |
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| 引用本文： | 张俊,魏峰,杨志民,陈秋云,陈军,王书明.Structure and chemical states of highly eptiaxial CeO2（001） films grown on SrTiO_3 substrate by laser molecular beam epitaxy[J].中国稀土学报(英文版),2013,31(12):1191-1194. |
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| 作者姓名： | 张俊 魏峰 杨志民 陈秋云 陈军 王书明 |
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| 作者单位： | [1]Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China [2]Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang 621907, China [3]National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials, General Research Institute for Nonferrous Metals, Beijing 100088, China |
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| 基金项目： | supported by National Natural Science Foundation of China（11076005,50932001） |
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| 摘 要： | Highly epitaxial and pure（001）-oriented CeO2 films were grown on SrTiO3（001） substrates by laser molecular beam epitaxy method without any gas ambient.Layer-by-layer epitaxial growth mode of CeO2 was confirmed by in situ reflection high-energy electron diffraction（RHEED） observations.High-resolution X-ray diffraction（HRXRD） and high-resolution transmission electron microscopy（HRTEM） results indicated the STO（100）//CeO2（100）,STO100]//CeO2 110] epitaxial relationship for out-of-plane and in-plane,respectively.The formation mechanism of the epitaxial film was also discussed in the light of a theoretical model.Chemical states of the LMBE ceria films were evaluated and evidences for the existence of Ce3＋and oxygen vacancies were presented.
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| 关 键 词： | CeO2薄膜 分子束外延法 化学状态 激光 高分辨透射电子显微镜 反射高能电子衍射 二氧化铈 基片 |
| 收稿时间： | 26 June 2013 |
Structure and chemical states of highly eptiaxial CeO2（001） films grown on SrTiO_3 substrate by laser molecular beam epitaxy |
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| ZHANG Jun;WEI Feng;YANG Zhimin;CHEN Qiuyun;CHEN Jun;WANG Shuming.Structure and chemical states of highly eptiaxial CeO2（001） films grown on SrTiO_3 substrate by laser molecular beam epitaxy[J].Journal of Rare Earths,2013,31(12):1191-1194. |
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| Authors: | ZHANG Jun;WEI Feng;YANG Zhimin;CHEN Qiuyun;CHEN Jun;WANG Shuming |
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| Affiliation: | ZHANG Jun;WEI Feng;YANG Zhimin;CHEN Qiuyun;CHEN Jun;WANG Shuming;Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals;Science and Technology on Surface Physics and Chemistry Laboratory;National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials,General Research Institute for Nonferrous Metals; |
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| Abstract: | Highly epitaxial and pure (001)-oriented CeO2 films were grown on SrTiO3(001) substrates by laser molecular beam epitaxy method without any gas ambient. Layer-by-layer epitaxial growth mode of CeO2 was confirmed by in situ reflection high-energy electron diffraction (RHEED) observations. High-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM) results indicated the STO(100)//CeO2(100), STO100]//CeO2110] epitaxial relationship for out-of-plane and in-plane, respectively. The formation mechanism of the epitaxial film was also discussed in the light of a theoretical model. Chemical states of the LMBE ceria films were evaluated and evidences for the existence of Ce3+ and oxygen vacancies were presented. |
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| Keywords: | laser molecular beam epitaxy CeO2 thin film oxygen vacancies rare earths |
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