高功率微波作用下金属氧化物半导体场效应管响应

采用基于半导体漂移扩散模型的数值模拟软件对高功率微波(HPM)作用下金属氧化物半导体场效应管(MOSFET)的响应进行了数值模拟研究。对MOSFET在HPM作用下的输出特性以及器件内部响应进行了数值模拟。计算结果表明,在MOSFET栅极加载HPM后,随着注入HPM幅值的增大,会使得器件的正向电压小于开启电压,从而使得输出电流的波形发生形变。在器件内部,导电沟道靠近源极一端的电场强度最大,热量产生集中在这一区域。在脉冲正半周期时,温度峰值位于沟道源极一端,负半周期时,器件内部几乎没有电流,器件内的温度峰值在热扩散效应的影响下趋向于导电沟道中部。

Response of metal-oxide-semiconductor field effect transistor to high-power microwaves

The response of metal-oxide -semiconductor field effect transistor (MOSFET) under high power microwaves (HPMs) is numerically studied by a simulator based on semiconductor drift-diffusion model. Output property and internal response of MOSFET is numerically simulated. Bias voltage may be reduced to less than threshold by the HPM signal injected in to gate electrode and results in a waveform change of output current. Inside the device, electric field intensity in one end of the channel close to the drain electrode is much higher than at the other places, and heat source is concentrated in this zone. In positive semi-cycles peak, the peak value of temperature is in one end of channel close to the drain electrode. In negative semi-cycles, the distribution of temperature tends to be uniform in the middle of the channel. The simulation result can be applied in damage mechanism analysis and design of MOSFET hardening against HPMs.