| HVPE生长室气流分布模拟及GaCl载气流量对GaN单晶生长的影响 |
| |
| 引用本文： | 张雷,邵永亮,吴拥中,张浩东,郝霄鹏,蒋民华.HVPE生长室气流分布模拟及GaCl载气流量对GaN单晶生长的影响[J].人工晶体学报,2011,40(4):853-857. |
| |
| 作者姓名： | 张雷 邵永亮 吴拥中 张浩东 郝霄鹏 蒋民华 |
| |
| 作者单位： | 山东大学晶体材料国家重点实验室,济南,250100 |
| |
| 基金项目： | 国家自然科学基金(No.50823009); 山东省科技发展计划项目(2010GGX10340) |
| |
| 摘 要： | 采用计算流体力学软件Fluent对HVPE反应室进行了数值模拟,研究了GaCl载气流量对HVPE反应室气流分布的影响,发现GaCl载气流量是影响GaCl和NH3在衬底上均匀分布的重要因素.采用HVPE方法在不同GaCl载气流量下生长GaN单晶,研究了GaCl载气流量对GaN单晶质量的影响,得到了与模拟一致的结果.
|
| 关 键 词： | 模拟 GaN 氢化物气相外延 气流分布 |
Simulation of Gas Distribution in HVPE Reactor and Influence of GaCl Carrier Gas Flow Rate on the GaN Crystal Growth |
| |
| ZHANG Lei,SHAO Yong-liang,WU Yong-zhong,ZHANG Hao-dong,HAO Xiao-peng,JIANG Min-hua.Simulation of Gas Distribution in HVPE Reactor and Influence of GaCl Carrier Gas Flow Rate on the GaN Crystal Growth[J].Journal of Synthetic Crystals,2011,40(4):853-857. |
| |
| Authors: | ZHANG Lei SHAO Yong-liang WU Yong-zhong ZHANG Hao-dong HAO Xiao-peng JIANG Min-hua |
| |
| Affiliation: | ZHANG Lei,SHAO Yong-liang,WU Yong-zhong,ZHANG Hao-dong,HAO Xiao-peng,JIANG Min-hua(State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China) |
| |
| Abstract: | In this paper,HVPE reactor was simulated by Fluent software.The influence of GaCl carrier gas flow rate on the gas distribution of HVPE reactor was investigated.The results show that GaCl carrier gas flow rate have great effect on the uniform distribution of GaCl and NH3 on substrate.GaN crystal was grown by HVPE method at different GaCl carrier gas flow rate.The influence of GaCl carrier gas flow rate on the quality of GaN crystal was investigated.The experimental results are consistent with simulations. |
| |
| Keywords: | simulation GaN hydride vapor phase epitaxy gas distribution |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《人工晶体学报》浏览原始摘要信息 |
|
点击此处可从《人工晶体学报》下载全文 |
|
