聚3-甲基噻吩及聚3-己基噻吩修饰钛酸盐纳米管的光电化学性能研究

采用水热法制备了钛酸盐纳米管, 并将钛酸盐纳米管制备成纳米结构电极进行光电化学研究. 钛酸盐纳米管产生阳极光电流, 具有n-型半导体特性. 结果表明, 聚3-甲基噻吩poly(3-methylthiophene), PMeT]、聚3-己基噻吩poly(3-hexylthiophene), P3HT]修饰钛酸盐纳米管后产生的光电流均较纯钛酸盐纳米管的光电流高, 且使产生光电流的波长向长波区移动. 钛酸盐纳米管/PMeT、钛酸盐纳米管/P3HT的光电转换效率分别达11.40%, 0.91%(未校正光子损失). 钛酸盐纳米管/PMeT的光电转换效率较钛酸盐纳米管/P3HT的光电转换效率高10.5%. 钛酸盐纳米管/PMeT、钛酸盐纳米管/P3HT中存在p-n异质结, 在一定条件下p-n异质结的存在有利于光生电子/空穴的分离.

Photoelectrochemical Performance of Titanate Nanotubes Modified with Poly(3-methylthiophene) and Poly(3-hexylthiophene)

Titanate nanotubes were prepared by hydrothermal method. The photoelectrochemical properties of the titanate nanotubes were investigated. The titanate nanotubes produced anodic photocurrent, exhibiting the property of n-type semiconductor. The experimental results showed that photocurrent produced by the poly(3-methylthiophene) (PMeT) modified titanate nanotubes and the poly(3-hexylthiophene) (P3HT) modi- fied titanate nanotubes was higher than that of the pure titanate nanotubes. The wavelength producing photocurrent for titanate nanotubes/PMeT and titanate nanotubes/P3HT both shifted to long wavelength re- gion respectively. The maximum IPCE of titanate nanotubes/PMeT and titanate nanotubes/P3HT reached 11.40% and 0.91% respectively (no correction for photon loss). The maximum IPCE of titanate nano- tubes/PMeT was higher by 10.5% than that of titanate nanotubes/P3HT. The p-n heterojunction existed in ti- tanate nanotubes/PMeT and titanate nanotubes/P3HT respectively, which favored the separation of elec- tron/hole pairs generated by photoexcition.