InGaAsSb negative luminescent devices with built-in cavities emitting at 3.9 μm |
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Authors: | M A Remennyi B A Matveev N V Zotova S A Karandashev N M Stus G N Talalakin |
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Affiliation: | IOFFE Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya ul. 26, St. Petersburg 194021, Russia |
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Abstract: | An As2S3 fiber coupled to an InGaAsSb photodiode was used to record the radiation distribution over the emitting surface in InGaAsSb episide-down-bonded negative luminescence devices (λ=3.9 μm). Emission spectra were recorded under forward and reverse bias and both were modulated by a Fabry–Perot resonator formed by the anode contact and emitting InAs surface in 45-μm thick diodes. The results show that the current/emission distribution crowds in the vicinity of the contact under forward bias, while a uniform current/emission distribution over the emitting surface is seen under reverse bias. |
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Keywords: | Negative luminescence IR photodiodes InGaAsSb Cold shielding |
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