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Improved interface properties of an Hf02 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer |
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| Authors: | Zhu Shu-Yan Xu Jing-Ping Wang Li-Sheng and Huang Yuan |
| Affiliation: | [1]School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China [2]Department of Physics Science and Technology, Wuhan University of Technology, Wuhan 430070, China |
| Abstract: | GaAs metal-oxide-semiconductor （MOS） devices, silicon nitride, interlayer, post-deposition an-nealing |
| Keywords: | GaAs metal-oxide-semiconductor （MOS） devices silicon nitride interlayer post-deposition an-nealing |
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