| 半导体可饱和吸收镜实现超短高功率脉冲激光研究进展 |
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| 引用本文： | 舒强, 舒永春, 刘如彬, 陈琳, 姚江宏, 许京军, 王占国. 半导体可饱和吸收镜实现超短高功率脉冲激光研究进展[J]. 激光与红外, 2007, 37(3): 197-199 |
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| 作者姓名： | 舒强 舒永春 刘如彬 陈琳 姚江宏 许京军 王占国 |
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| 作者单位： | 南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457;南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457;中国科学院半导体研究所半导体材料科学重点实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金 , 天津市应用基础研究项目 |
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| 摘 要： | 介绍了半导体可饱和吸收镜(SESAM)的基本结构及使用半导体可饱和吸收镜被动锁模固态激光器的基本原理.综述了利用半导体可饱和吸收镜被动锁模薄片式固态激光器及光泵浦垂直外腔面发射半导体激光器,获得高平均输出功率超短脉冲的最新进展,并指出量子点半导体可饱和吸收镜的使用将加速超短高功率脉冲的发展.
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| 关 键 词： | 激光技术 半导体可饱和吸收镜 被动锁模 薄片式固态激光器 光泵浦垂直外腔面发射半导体激光器 |
| 文章编号： | 1001-5078（2007）03-0197-03 |
| 修稿时间： | 2006-07-102006-08-22 |
Development of Semiconductor Saturable Absorption Mirror Used for High Average Output Power Ultrashort Pulses Laser |
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| SHU Qiang; SHU Yong-chun; LIU Ru-bin; CHEN Lin; YAO Jiang-hong; XU Jing-jun; WANG Zhan-guo. Development of Semiconductor Saturable Absorption Mirror Used for High Average Output Power Ultrashort Pulses Laser[J]. Laser & Infrared, 2007, 37(3): 197-199 |
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| Authors: | SHU Qiang SHU Yong-chun LIU Ru-bin CHEN Lin YAO Jiang-hong XU Jing-jun WANG Zhan-guo |
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| Affiliation: | Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials; Ministry of Education; Tianjin 300457; China; Key Laboratory of Semiconductor Materials Science; Institute of Semiconductors; Chinese Academy of Sciences; Beijing 100083; China |
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| Abstract: | The basic structure and the fundamental principle of semiconductor saturable absorption mirrors(SESAM) that are used for passive mode-locking solid-state lasers are introduced.By using these mode-locking devices on novel thin-disk solid state lasers and optically pumped vertical-external-cavity surface-emitting semiconductor lasers(OPS-VECSEL) to obtain high average output power ultrashort pulses are stated,and it is emphasized that the study of high average output power ultrashort pulses laser can be accel... |
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| Keywords: | laser techniques semiconductor saturable absorption mirrors passive mode-locking thin-disk solid-state lasers optically pumped vertical-external-cavity surface-emitting semiconductor lasers |
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