Fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation |
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| Authors: | C.Y. Liu S.F. Yoon S.Z. Wang W.J. Fan Y. Qu S. Yuan |
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| Affiliation: | Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore; |
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| Abstract: | We have demonstrated high-performance InGaAsN triple-quantum-well ridge waveguide (RWG) lasers fabricated using pulsed anodic oxidation. The lowest threshold current density of 675 A/cm/sup 2/ was obtained from a P-side-down bonded InGaAsN laser, with cavity length of 1600 /spl mu/m and contact ridge width of 10 /spl mu/m. The emission wavelength is 1295.1 nm. The transparency current density from a batch of unbonded InGaAsN RWG lasers was 397 A/cm/sup 2/ (equivalent to 132 A/cm/sup 2/ per well). High characteristic temperature of 138 K was also achieved from the bonded 10/spl times/1600-/spl mu/m/sup 2/ InGaAsN laser. |
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