ZnO纳米棒/薄膜结构的电沉积制备及性能

以阳离子表面活性剂——十六烷三甲基氯化铵(CTAC)作为添加剂,采用电沉积法在氧化铟锡玻璃基板上制备了ZnO薄膜。并研究了CTAC含量对阴极电流密度、结构、表面形貌、化学态和光学性能的影响。实验发现阴极电流密度和(002)择优取向随CTAC含量的增加而增加。电沉积氧化锌薄膜的表面形貌随CTAC含量的增加由小晶粒变为纳米棒,这表明CTAC在控制表面形貌方面有很重要的作用。X-射线光电子能谱表明Zn2p3/2,Zn2p1/2,O1s的峰位分别为1020.78eV、1046.88eV和530.8eV。CTAC对电沉积的影响可能是由于CTAC的吸附作用改变了不同晶面的表面能和生长动力学。此外,研究了ZnO薄膜的光学性能,结果表明当CTAC含量为3.0mmol/L时,薄膜具有较好的透光性和紫外发射性能。添加不同含量CTAC的ZnO薄膜禁带宽度介于3.27～3.52eV。

Synthesis and Properties of ZnO Nanorods/Thin Film Structure by Electrodeposition

ZnO thin films were synthesized on indium tin oxide glass substrate by electrodeposition with ca-tionic surfactant,cetyl trimethylammonium chloride(CTAC)as an additive.The effects of concentration of CTAC on the cathodic current density,structure,surface morphology,stoichiometric state and optical properties were investigated.It was observed that the cathodic current density and(002)preferred orientation increase with the concentration of CTAC increased.The morphology of electro-deposited ZnO thin films evolved from small grain to nanorods with increasing the concentration of CTAC,which indicated that CTAC plays a key role in the controlling the morphology.The X-ray photoelectron spectroscopy spectra showed that the peak positions corresponding to the Zn2p3/2,Zn2p1/2 and O1s are 1 020.78 eV,1046.88 eV and 530.8 eV,respectively.The possible mechanism of CTAC affected the deposition was due to the adsorption of CTAC,which in turn change the surface energies of different crystal faces and affect the growth kinetics.Furthermore,the optical properties of ZnO thin films were investigated and found that the ZnO thin films have better optical transmittance and ultraviolet emission when the concentration of CTAC is 3.0 mmol/L.The band gap of electro-deposited ZnO thin films with different concentration of CTAC is in the range of 3.27~3.52 eV.