Ti靶及TiO2靶溅射TiO2薄膜微观形貌、结构及光学性质研究

利用射频磁控溅射技术通过Ti靶及TiO2靶在氩氧气氛中同时溅射制备TiO2薄膜,并对所得的样品进行不同温度的退火处理。采用X射线衍射、扫描电子显微镜、拉曼光谱和吸收谱研究了不同的靶材及退火温度对TiO2薄膜晶体结构、微观形貌及光学性质的影响。结果表明:由于靶材的不同,Ti靶溅射时氧分压较低,造成薄膜中存在大量的氧缺陷,晶相发育不完善,颗粒相比TiO2靶溅射时较小,从XRD和拉曼光谱来看,Ti靶溅射得到的TiO2薄膜更有利于金红石相的形成。薄膜的透过率随退火温度的升高而降低,TiO2靶材溅射的薄膜的光学带隙随温度升高而明显降低,而Ti靶得到的薄膜的光学带隙对退火温度的依赖关系不明显。

Study on the morphology, structural and optical properties of TiO2 thin films sputtered by Ti target and TiO2 target

TiO2 thin films were deposited on melted-quartz substrate through Ti target and TiO2 target on the same argon-oxygen atmosphere by RF magnetron sputtering method,which were then annealed at different temperatures.The morphology,crystal structure and optical properties of the samples were studied using X-ray diffraction,scanning electron microscope,Raman spectroscopy and UV-Vis spectra.The experimental results showed that as the annealing temperature increaseing,the crystal grains increased apparently and TiO2 thin films transformed from anatase to rutile at about 700 centigrade.In addition,there were more oxygen vacancies existing in the TiO2 thin films sputtered by Ti target,which limited the crystal growth greatly.From XRD and Raman spectra,we can deduce that rutile was easier to develop in TiO2 films than anatase during Ti target sputtering.With the increasing of annealing temperature,the transmittance of films decreased,and at the same time the bandgap of TiO2 film from TiO2 target decreased a lot and that from Ti target changed little.