首页 | 官方网站   微博 | 高级检索  
     


Two sources of excitation of photoluminescence of porous silicon
Authors:N E Korsunskaya  T V Torchinskay  B R Dzhumaev  L Yu Khomenkova  B M Bulakh
Affiliation:(1) Institute of Semiconductor Physics National Academy of Sciences, 252650 Kiev, Ukraine
Abstract:The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength of the exciting light: In the case of excitation in the visible-range band of the luminescence excitation spectrum (λexc>490 nm) the photoluminescence decreases and in the case of excitation in the ultraviolet band it predominantly increases. It is shown that the two bands of the luminescence excitation spectrum (visible and ultraviolet) correspond to two different objects on the surface of the porous layer. Fiz. Tekh. Poluprovodn. 31, 908–911 (August 1997)
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号