| 商用CMOS工艺SRAM脉冲中子辐射效应实验 |
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| 引用本文： | 齐 超,杨善潮,刘 岩,陈 伟,林东生,金晓明,王晨辉.商用CMOS工艺SRAM脉冲中子辐射效应实验[J].太赫兹科学与电子信息学报,2016,14(5):800-804. |
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| 作者姓名： | 齐 超 杨善潮 刘 岩 陈 伟 林东生 金晓明 王晨辉 |
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| 作者单位： | State Key Laboratory of Intense Pulsed Radiation Simulation and Effect，Northwest Institute of Nuclear Technology，Xi’an Shaanxi 710024，China,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect，Northwest Institute of Nuclear Technology，Xi’an Shaanxi 710024，China,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect，Northwest Institute of Nuclear Technology，Xi’an Shaanxi 710024，China,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect，Northwest Institute of Nuclear Technology，Xi’an Shaanxi 710024，China,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect，Northwest Institute of Nuclear Technology，Xi’an Shaanxi 710024，China,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect，Northwest Institute of Nuclear Technology，Xi’an Shaanxi 710024，China and State Key Laboratory of Intense Pulsed Radiation Simulation and Effect，Northwest Institute of Nuclear Technology，Xi’an Shaanxi 710024，China |
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| 摘 要： | 为研究互补金属氧化物半导体(CMOS)工艺静态随机处理内存(SRAM)脉冲中子辐射效应机理，对SRAM翻转效应进行了蒙特卡罗模拟。该模拟基于脉冲中子辐照下SRAM翻转是单粒子翻转的叠加的假设，计算了单位翻转和伪多位翻转在总翻转数中的百分比。在西安脉冲反应堆上对3种特征尺寸商用SRAM开展了脉冲工况实验研究，得到了单位翻转和伪2位翻转数据，结合模拟结果分析了SRAM在脉冲中子作用下的翻转机制。
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| 关 键 词： | 脉冲中子 单粒子翻转 伪多位翻转 静态随机存储器 |
| 收稿时间： | 2015/7/8 0:00:00 |
| 修稿时间： | 2015/9/1 0:00:00 |
Experimental investigations on pulsed neutron radiation effect on commercial CMOS SRAMs |
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| QI Chao,YANG Shanchao,LIU Yan,CHEN Wei,LIN Dongsheng,JIN Xiaoming and WANG Chenhui.Experimental investigations on pulsed neutron radiation effect on commercial CMOS SRAMs[J].Journal of Terahertz Science and Electronic Information Technology,2016,14(5):800-804. |
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| Authors: | QI Chao YANG Shanchao LIU Yan CHEN Wei LIN Dongsheng JIN Xiaoming and WANG Chenhui |
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