| 200nm栅长In0.52Al0.48As/In0.6Ga0.4As MHEMTs器件 |
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| 引用本文： | 黎明,张海英,徐静波,付晓君.200nm栅长In0.52Al0.48As/In0.6Ga0.4As MHEMTs器件[J].半导体学报,2008,29(9). |
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| 作者姓名： | 黎明 张海英 徐静波 付晓君 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，解放军总装备部预研项目，中国科学院微电子研究所所长基金 |
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| 摘 要： | 利用电子束光刻技术制备出200nm栅长GaAs基InAlAs/InGaAs MHEMT器件.Ti/Pt/Au蒸发作为栅极金属.同时为了减少栅寄生电容和寄生电阻,采用3层胶工艺,实现了T型栅.GaAs基MHEMT 器件获得了优越的直流和高频性能,跨导、饱和漏电流密度、域值电压、电流增益截止频率和最大振荡频率分别达到510mS/mm,605mA/mm,-1.8V,110GHz及72GHz,为进一步研究高性能GaAs基MHEMT器件奠定了基础.
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| 关 键 词： | MHEMT InAlAs/InOaAs 电子束光刎 T型栅 |
200nm Gate Length Metamorphic In0.52 Al0.48 As/In0.6 Ga0.4 As HEMTs on GaAs Substrates with ll0GHz fT |
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| Li Ming,Zhang Haiying,Xu Jingbo,Fu Xiaojun.200nm Gate Length Metamorphic In0.52 Al0.48 As/In0.6 Ga0.4 As HEMTs on GaAs Substrates with ll0GHz fT[J].Chinese Journal of Semiconductors,2008,29(9). |
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| Authors: | Li Ming Zhang Haiying Xu Jingbo Fu Xiaojun |
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| Abstract: | 200nm gate-length GaAs-based InAlAs/InGaAs MHEMTs are fabricated by MBE epitaxial material and EBL (electron beam lithography) technology. Ti/Pt/Au is evaporated to form gate metals. A T-shaped gate is produced using a novel PMMA/PMGI/PMMA trilayer resist structure to decrease parasitic capacitance and parasitic resistance of the gate. Excellent DC and RF performances are obtained and the transconductance (gm), maximum saturation drain current density (JDSS), threshold voltage (VT), current cut-off frequency (fT), and maximum oscillation frequency (fmax) of InAlAs/ InGaAs MHEMTs are 510mS/mm,605mA/mm, - 1.8V, 110GHz, and 72GHz, respectively. |
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| Keywords: | MHEMT InAlAs/InGaAs electron beam lithography T-shaped gate |
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