| 扩Zn2+多孔硅的光致发光性能 |
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| 引用本文： | 张玉娟,贾振红,涂楚辙. 扩Zn2+多孔硅的光致发光性能[J]. 半导体光电, 2006, 27(6): 745-747 |
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| 作者姓名： | 张玉娟 贾振红 涂楚辙 |
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| 作者单位： | 新疆大学物理学院,新疆,乌鲁木齐,830046;新疆大学信息科学与工程学院,新疆,乌鲁木齐,830046 |
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| 基金项目： | 国家自然科学基金 , 中国科学院"西部之光"人才培养计划 , 新疆高等学校科研项目 |
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| 摘 要： | 用快扩散方式把Zn2 掺入到单晶硅中,再用阳极电化学腐蚀方法把样品腐蚀成多孔硅.利用荧光分光光度计测试了样品的光致发光特性,结果表明Zn2 的扩散增强了多孔硅的荧光发射,并分别利用扫描电镜和傅里叶变换红外光谱仪研究了多孔硅薄膜的表面形态和样品的红外吸收光谱.
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| 关 键 词： | 多孔硅 Zn2+扩散 光致发光 |
| 文章编号： | 1001-5868(2006)06-0745-03 |
| 收稿时间： | 2006-05-15 |
| 修稿时间： | 2006-05-15 |
Photoluminescence Performance of Zn2+-Diffused Porous Silicon |
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| ZHANG Yu-juan,JIA Zhen-hong,TU Chu-zhe. Photoluminescence Performance of Zn2+-Diffused Porous Silicon[J]. Semiconductor Optoelectronics, 2006, 27(6): 745-747 |
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| Authors: | ZHANG Yu-juan JIA Zhen-hong TU Chu-zhe |
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| Affiliation: | 1. College of Physics; 2. College of Information Science and Engineering, Xinjiang University, Urunchi 830046, CHN |
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| Abstract: | Zn2+ions have been doped into single-crystalline silicon making use of quick diffusion method.Fluorescence photospectrometer has been used to analyze the photoluminescence properties of the samples which are fabricated by anode electrochemical etching,and the results show that the luminescence intensity of porous silicon is increased after Zn2+diffusion.Moreover,the surface morphology of the samples and FTIR absorption spectra have been investigated by means of scanning electron microscope and Fourier transform infrared spectroscopy. |
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| Keywords: | porous silicon Zn2+diffusion photoluminescence |
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