| 深能级杂质对光导半导体开关非线性特性的影响 |
| |
| 引用本文： | 张同意,石顺祥,赵卫,龚仁喜,孙艳玲. 深能级杂质对光导半导体开关非线性特性的影响[J]. 光子学报, 2003, 32(1): 121-123 |
| |
| 作者姓名： | 张同意 石顺祥 赵卫 龚仁喜 孙艳玲 |
| |
| 作者单位： | 1. 西安电子科技大学,技术物理学院,西安,710071
2. 中国科学院西安光机所,瞬态光学技术国家重点实验室,西安,710068 |
| |
| 基金项目： | 国家自然科学基金资助项目 (6 97810 0 2 ) |
| |
| 摘 要： | 建立了非线性GaAs光导开关深能级杂质瞬态模型的基本方程,获得了与实验现象定性吻合的电流输出,给出了平均载流子随时间演化的情况.分析结果表明,在考虑了深能级杂质的俘获、发射和碰撞电离后,有可能对非线性光导开关中发生的一系列现象做出解释,进一步的仔细分析将对非线性光导开关的设计和制作提供理论指导.
|
| 关 键 词： | 光导半导体开关 非线性工作模式 深能级杂质模型 数值分析 |
| 收稿时间： | 2001-11-05 |
| 修稿时间： | 2001-11-05 |
The Effect of Deep Level Impurity on the Nonlinear Performances of Photoconductive Semiconductor Switches |
| |
| Zhang Tongyi,Shi Shunxiang,Zhao Wei,Gong Renxi,Sun Yanling School of Technical Physics,Xidian University,Xi'an State Key Laboratory of Transient Optics Technology,Xi'an Institute of Optics , Precision Mechanics,Academia Sinica,Xi'an Received date:. The Effect of Deep Level Impurity on the Nonlinear Performances of Photoconductive Semiconductor Switches[J]. Acta Photonica Sinica, 2003, 32(1): 121-123 |
| |
| Authors: | Zhang Tongyi Shi Shunxiang Zhao Wei Gong Renxi Sun Yanling School of Technical Physics Xidian University Xi'an State Key Laboratory of Transient Optics Technology Xi'an Institute of Optics & Precision Mechanics Academia Sinica Xi'an Received date: |
| |
| Affiliation: | Zhang Tongyi1,Shi Shunxiang1,Zhao Wei2,Gong Renxi1,Sun Yanling1 1 School of Technical Physics,Xidian University,Xi'an 710071 2 State Key Laboratory of Transient Optics Technology,Xi'an Institute of Optics & Precision Mechanics,Academia Sinica,Xi'an 710068 Received date:20011115 |
| |
| Abstract: | The equations of transient deep level impurity model of nonlinear photoconductive semiconductor switches are developed. Output current waveform coinciding with experimental result qualitatively is obtained by simulating numerically. The time dependence of average carrier densities is presented. The results indicate that it maybe possible to explain the nonlinear phenomena observed in photoconductive semiconductor switches if the emission, capture of carrier by deep level traps and their impact ionization included. More detailed analysis may help the designs and fabrications of PCSS. |
| |
| Keywords: | Nonlinear operational modes Deep level impurity model Numerical analysis |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《光子学报》浏览原始摘要信息 |
|
点击此处可从《光子学报》下载全文 |
|
