| 垒层Si掺杂对AIGaInP/GaInP多量子阱性能的影响 |
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| 引用本文： | 谭春华,范广涵,周天明,李述体,黄琨,雷勇. 垒层Si掺杂对AIGaInP/GaInP多量子阱性能的影响[J]. 半导体技术, 2005, 30(2): 10-12,20 |
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| 作者姓名： | 谭春华 范广涵 周天明 李述体 黄琨 雷勇 |
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| 作者单位： | 华南师范大学光电子材料与技术研究所,广州,510631;华南师范大学光电子材料与技术研究所,广州,510631;华南师范大学光电子材料与技术研究所,广州,510631;华南师范大学光电子材料与技术研究所,广州,510631;华南师范大学光电子材料与技术研究所,广州,510631;华南师范大学光电子材料与技术研究所,广州,510631 |
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| 基金项目： | 广东省广州市科技攻关项目 |
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| 摘 要： | 低压MOCVD方法生长了垒层掺Si与不掺Si的AlGaInP/GaInP多量子阱结构,运用X双晶衍射与光荧光技术研究了掺Si对量子阱性能的影响.测试结果表明垒层掺Si使量子阱的生长速度增加,掺Si量子阱的光荧光强度比未掺Si量子阱的光荧光强度增强了1 3倍.
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| 关 键 词： | X双晶衍射 M O C VD 量子阱 光荧光 |
| 文章编号： | 1003-353X(2004)02-0010-03 |
Effect of Si-Doping in Barrier Layers on the Characteristics of AlGaInP/GaInP Multiple Quantum Wells |
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| TAN Chun-hua,FAN Guang-han,ZHOU Tian-ming,LI Shu-ti,HUANG Kun,LEI Yong. Effect of Si-Doping in Barrier Layers on the Characteristics of AlGaInP/GaInP Multiple Quantum Wells[J]. Semiconductor Technology, 2005, 30(2): 10-12,20 |
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| Authors: | TAN Chun-hua FAN Guang-han ZHOU Tian-ming LI Shu-ti HUANG Kun LEI Yong |
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| Abstract: | AlGaInP:Si/GaInP and AlGaInP/GaInP MQW structures were grown by LP-MOCVD. The effect of Si-doping on the characteristics of AlGalnP/GalnP MQW was studied by using double crystal X-ray diffraction and photoluminescence. The results show that the growth rate of MQW increases with Si-doping and the intensity from MQW with Si-doped is strong as 13 times as that of undoped MQW. |
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| Keywords: | double crystal X-ray diffraction MOCVD QW photoluminescence |
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