| 光激瞬态电流谱方法中激发光强度等因素对结果的影响 |
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| 引用本文： | 史智盛,阎大卫,马小翠,邹慧珠,刘文明.光激瞬态电流谱方法中激发光强度等因素对结果的影响[J].吉林大学学报(理学版),1990(1). |
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| 作者姓名： | 史智盛 阎大卫 马小翠 邹慧珠 刘文明 |
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| 作者单位： | 吉林大学电子科学系，吉林大学电子科学系，吉林大学电子科学系，吉林大学电子科学系，吉林大学电子科学系 长春物理研究所 |
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| 摘 要： | 本文讨论了用光激瞬态电流谱测量半绝缘材料中深能级时,所加电压的极性、光强的变化等因素对结果的影响。对Martin等人提出的判断陷阱类型的方法进行了分析,在此基础上提出了一种新的方法。并给出了由光强变化而引起的能级位置的测量误差的修正方法。
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| 关 键 词： | 光激瞬态电流谱 电子陷阱 空穴陷阱 光强 |
The Influences of Excitation Light Intensity and Other Factors in Optical Transient Current Spectroscopy |
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| Shi Zhisheng,Yan Dawei,Ma Xiaocui,Zhou Huizhu and Liu Wenmin.The Influences of Excitation Light Intensity and Other Factors in Optical Transient Current Spectroscopy[J].Journal of Jilin University: Sci Ed,1990(1). |
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| Authors: | Shi Zhisheng Yan Dawei Ma Xiaocui Zhou Huizhu and Liu Wenmin |
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| Abstract: | Optical transient current spectroscopy (OTCS) was investigated under different conditions by changing the excitation light intensities, the voltage of bias and its polarity on semi-insulating GaAs. It was found that the OTCS peaks were observed to be shifted with the excitation light intensity. This phenomenon is analysed and a correction method is suggested in this paper. OTCS mesurements of SI-GaAs were carried out and the method of distinguishing electron traps from hole traps by OTCS is discussed. |
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| Keywords: | optical transient current spectroscopy electron traps hole traps excitation light intensity |
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