| 电子束蒸发在Si衬底上制备MgB2超导薄膜 |
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| 引用本文： | 朱红妹,熊文杰,高召顺,张义邴.电子束蒸发在Si衬底上制备MgB2超导薄膜[J].低温与超导,2004,32(2):51-52,59. |
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| 作者姓名： | 朱红妹 熊文杰 高召顺 张义邴 |
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| 作者单位： | 上海大学理学院物理系,200436;上海大学理学院物理系,200436;上海大学理学院物理系,200436;上海大学理学院物理系,200436 |
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| 摘 要： | 利用电子束蒸发法在 Si(111)衬底上制备了 Mg B2 超导薄膜。首先在衬底上按照 1∶ 2的原子比交替蒸发 Mg和 B,所形成的夹层先驱膜在 15 0 Pa99.99% Ar气氛下进行原位热处理 6 30℃× 30 m in。实验发现超导薄膜在正常态下无半导体电阻特性 ,超导起始转变温度为 2 4 .7K,零电阻温度为 16 .5 K。
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| 关 键 词： | 超导薄膜 电子束蒸发 原位热处理 |
| 修稿时间： | 2002年2月20日 |
MgB2 Superconducting Thin Films Deposited by E-beam Evaporation on Si Substrate |
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| Zhu Hongmei,Xiong Wenjie,Gao Zhaoshun,Zhang Yibing.MgB2 Superconducting Thin Films Deposited by E-beam Evaporation on Si Substrate[J].Cryogenics and Superconductivity,2004,32(2):51-52,59. |
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| Authors: | Zhu Hongmei Xiong Wenjie Gao Zhaoshun Zhang Yibing |
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| Abstract: | MgB 2 superconducting thin films on Si(111) substrate were grown by electron beam evaporation. The precursor films of Mg and B layers with the atom ratio of 1:2 were deposited on Si(111) substrate, then in-situ annealed at 630℃×30min and 150Pa, 99.99% Ar pressure in the coating vacuum room. The resistance measurement shows that the sample has weak metal property other than semiconducting property on the normal state, and the zero resistance transition temperature is 16.5K with a onset transition temperature of 24.7K. |
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| Keywords: | Superconducting thin films E-beam evaporation In-situ annealed |
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