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Polarization-enhanced photovoltaic response and mechanisms in Ni-doped (Bi0.93Gd0.07)FeO3 ceramics for self-powered photodetector
Authors:Yuan-Han Hsu  Pin-Yi Chen  Chi-Shun Tu  Cheng-Sao Chen  J. Anthoniappen
Affiliation:1. Department of Mechanical Engineering, Ming Chi University of Technology, New Taipei City, 24301, Taiwan;2. Department of Physics, Fu Jen Catholic University, New Taipei City, 24205, Taiwan;3. Department of Mechanical Engineering, Hwa Hsia University of Technology, New Taipei City, 23567, Taiwan;4. Department of Physics, University of San Carlos, Cebu City, 6000, Philippines
Abstract:Multiferroic toxicity-free perovskite BiFeO3-based materials reveal potentials in photoelectrical conversion, energy harvesting and photodetector. This work highlights polarization-enhanced photovoltaic (PV) effects and mechanisms in B-site Ni-doped (Bi0.93Gd0.07)FeO3 ceramics with indium tin oxide (top electrode) and Au (bottom electrode) thin films. The enhanced PV effects are attributed to the reduced bandgap, polarization-modulated Schottky barrier, increased O 2p-Fe 3d orbital hybridization, and nucleation of domain walls to improve transportation of charge carriers. Improved PV parameters of responsivity (R) ~1.71 × 10?2 A/W, detectivity (D*) ~9.56 × 1011 Hz1/2/W (Jones), open-circuit voltage (Voc) ~0.65 V, and short-circuit current density (Jsc) ~80 μA/cm2 were obtained from the ITO/ (Bi0.93Gd0.07)(Fe0.97Ni0.03)O3/ Au heterostructure after 2 kV/cm poling under 405 nm irradiation at 103 W/m2 intensity. This work demonstrates that Ni-doped (Bi0.93Gd0.07)FeO3 ceramics can be potential candidates for self-powered UV photodetector.
Keywords:Photovoltaic conversion  Schottky barrier  Responsivity  Specific detectivity  Domain wall
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