Decreasing polar-structure size: Achieving superior energy storage properties and temperature stability in Na0.5Bi0.5TiO3-based ceramics for low electric field and high-temperature applications |
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Authors: | Lei Zhang Yongping Pu Min Chen Fangping Zhuo Christian Dietz Till Frömling |
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Affiliation: | 1. School of Materials Science and Engineering, Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials, Shaanxi University of Science and Technology, Xi’an, 710021, China;2. Department of Materials and Earth Sciences, Technical University of Darmstadt, 64287, Darmstadt, Germany;3. Physics of Surfaces, Institute of Materials Science, Technical University of Darmstadt, 64287, Darmstadt, Germany |
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Abstract: | It is a grand challenge to achieve high energy density (W) and efficiency (η) simultaneously under a low electric field (LE) to obtain new high energy storage capacitors. Similar to anti-ferroelectrics, the (1-x)NBT-xBaMg1/3Nb2/3O3 relaxor material exhibits a non-linear dependence on electric field, which is caused by a reversible field-induced phase transition. This leads to high W (2.37 J/cm3) and η (81.5 %) under a LE of 155 kV/cm, which makes it superior to other bulk ceramics. Combining large polarizability of Ba2+ in A-site and local structural heterogeneity on the B-site by Mg1/3Nb2/34+, enhanced relaxor behavior and decreased polar-structure size were induced in (1-x)NBT-xBaMg1/3Nb2/3O3 ceramics. The permittivity, nevertheless, stays high at ~2273±15 %. Furthermore, the electrical properties become stable in a wide temperature range from 44?396 °C for the sample with x=0.15. In addition, high current density/CD (450 A/cm2), power density/PD (23 MW/cm3) and discharge density/WD (0.57 J/cm3) were realized tested with pulse discharge testing. Our work will provide a development guidance for dielectric energy storage ceramics at low field and high fields with excellent temperature stability. |
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Keywords: | Low electric field High-temperature capacitors Polar structure Energy storage |
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